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HAIT Journal of Science and Engineering A Volume 5, Issues 1-2, pp. 41-51 © 2008 Holon Institute of Technology |
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Bipolar diffusion in two-dimensional structuresAlexander Shik1,* and Israel D. Vagner2 |
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1Centre for Advanced Nanotechnology, University of Toronto, Toronto M5S 3E4, Canada 2Research Center for Quantum Communication Engineering, Holon Institute of Technology, 52 Golomb St., Holon 58102, Israel *Corresponding author: shik@ecf.utoronto.ca Received 6 September 2007 |
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Spatial distribution of non-equilibrium carriers created by a partial interband illumination of two-dimensional structures was analyzed theoretically. Due to a weak electron screening in low-dimensional systems, the carrier distribution essentially differs from that in bulk semiconductors. Instead of exponential decay of quasi-neutral electron and hole concentration, the majority carrier distribution has a long-range hyperbolic tail, which can be either positive or negative, depending on the mobility ratio of majority and minority carriers. |
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